Autor: |
Kelemen, M.T., Weber, J., Rattunde, M., Kaufel, G., Schmitz, J., Moritz, R., Mikulla, M., Wagner, J. |
Přispěvatelé: |
Publica |
Jazyk: |
angličtina |
Rok vydání: |
2006 |
Předmět: |
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Popis: |
High-power 1.91-µm (AlGaIn)(AsSb) quantum-well diode laser single emitters and linear arrays with improved waveguide design were fabricated and characterized. The use of a rather narrow waveguide core results in a remarkable low fast axis beam divergence of 44 deg full-width at half-maximum. For single emitters, a continuous-wave (CW) output power of nearly 2 W has been observed. We have achieved 16.9 W in CW mode at a heat sink temperature of 20 deg C. The efficiencies of more than 25% are among the highest values reported so far for GaSb-based diode lasers, and allow the use of passively cooled and, thus, less expensive heat sink technologies. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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