Two-Terminal direct Wafer bonded GaInP/AlGaAs//Si Triple-Junction Solar Cell with AM1.5g Efficiency of 34.1 %

Autor: Lackner, D., Höhn, O., Müller, R., Beutel, P., Schygulla, P., Hauser, H., Predan, F., Siefer, G., Schachtner, M., Schön, J., Benick, J., Hermle, M., Dimroth, F.
Přispěvatelé: Publica
Jazyk: angličtina
Rok vydání: 2020
Předmět:
Popis: The terrestrial photovoltaic market is dominated by single‐junction silicon solar cell technology. However, there is a fundamental efficiency limit at 29.4%. This is overcome by multijunction devices. Recently, a GaInP/GaAs//Si wafer‐bonded triple‐junction two‐terminal device is presented with a 33.3% (AM1.5g) efficiency. Herein, it is analyzed how this device is improved to reach a conversion efficiency of 34.1%. By improving the current matching, an efficiency of 35% (two terminals, AM1.5g) is expected.
Databáze: OpenAIRE