Autor: |
Lackner, D., Höhn, O., Müller, R., Beutel, P., Schygulla, P., Hauser, H., Predan, F., Siefer, G., Schachtner, M., Schön, J., Benick, J., Hermle, M., Dimroth, F. |
Přispěvatelé: |
Publica |
Jazyk: |
angličtina |
Rok vydání: |
2020 |
Předmět: |
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Popis: |
The terrestrial photovoltaic market is dominated by single‐junction silicon solar cell technology. However, there is a fundamental efficiency limit at 29.4%. This is overcome by multijunction devices. Recently, a GaInP/GaAs//Si wafer‐bonded triple‐junction two‐terminal device is presented with a 33.3% (AM1.5g) efficiency. Herein, it is analyzed how this device is improved to reach a conversion efficiency of 34.1%. By improving the current matching, an efficiency of 35% (two terminals, AM1.5g) is expected. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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