| Autor: |
Mazzolini, Piero, Fogarassy, Zsolt, Parisini, Antonella, Mezzadri, Francesco, Diercks, David, Bosi, Matteo, Seravalli, Luca, Sacchi, Anna, Spaggiari, Giulia, Bersani, Danilo, Bierwagen, Oliver, Tahraoui, Abbes, Janzen, Benjamin Moritz, Marggraf, Marcella Naomi, Cora, Ildiko, Pécz, Béla, Wagner, Markus R., Bosio, Alessio, Borelli, Carmine, Leone, Stefano, Fornari, Roberto |
| Přispěvatelé: |
Publica |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Popis: |
Unintentionally doped (001)-oriented orthorhombic κ-Ga(2)O(3) epitaxial films on c-plane sapphire substrates are characterized by the presence of ≈ 10 nm wide columnar rotational domains that can severely inhibit in-plane electronic conduction. Comparing the in- and out-of-plane resistance on well-defined sample geometries, it is experimentally proved that the in-plane resistivity is at least ten times higher than the out-of-plane one. The introduction of silane during metal-organic vapor phase epitaxial growth not only allows for n-type Si extrinsic doping, but also results in the increase of more than one order of magnitude in the domain size (up to ≈ 300 nm) and mobility (highest µ ≈ 10 cm(2)V(-1)s(-1), with corresponding lowest ρ ≈ 0.2 Ωcm). To qualitatively compare the mean domain dimension in κ-Ga(2)O(3) epitaxial films, non-destructive experimental procedures are provided based on X-ray diffraction and Raman spectroscopy. The results of this study pave the way to significantly improved in-plane conduction in κ-Ga(2)O(3) and its possible breakthrough in new generation electronics. The set of cross-linked experimental techniques and corresponding interpretation here proposed can apply to a wide range of material systems that suffer/benefit from domain-related functional properties. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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