| Autor: |
Mueller, S., Slesazeck, S., Henker, S., Flachowsky, S., Polakowski, P., Paul, J., Smith, E., Müller, J., Mikolajick, T. |
| Přispěvatelé: |
Publica |
| Jazyk: |
angličtina |
| Rok vydání: |
2016 |
| Popis: |
With the discovery of ferroelectric hafnium oxide (FE-HfO2), the ferroelectric field effect transistor (FeFET), a long-term contender for non-volatile data storage, has finally managed to scale to the 2x nm technology node. Here for the first time, we correlate the thickness dependent ferroelectric properties of Si:HfO2 with the memory characteristics of small (56bit) FeFET arrays. First, an electrical and structural analysis of metal-ferroelectric-metal capacitors is given. Even though possessing room-temperature deposited top electrodes, TiN / Si:HfO2 (20nm) / TiN capacitors are showing deteriorated polarization characteristics as compared to their 10nm Si:HfO2 counterparts. This could be attributed to an increased monoclinic phase fraction, as indicated by small-signal capacitance voltage and grazing incidence X-ray diffraction measurements. Identical Si:HfO2 thin films with thicknesses of 10nm and 20nm respectively, were utilized in a 28nm high-k metal-gate CMOS flow to form small FeFET memory arrays of AND architecture. After extracting the most suitable operating conditions from erase matrix, single cell evaluation was performed by standard V-P/3 program and a novel V-P/3 positive-source drain erase scheme. Array cells incorporating 10nm Si:HfO2 films showed a maximum memory window of 1.03 V whereas cells incorporating 20nm Si:HfO2 films could reach up to 1.57V. Moreover, in accordance to the basic material properties, the previously observed increased monoclinic phase fraction in 20nm Si:HfO2 thin films correlate well with a reduced number of functional FeFET cells. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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