1.3 μm monolithic integrated optoelectronic receiver using InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs

Autor: Hurm, Volker, Benz, Willi, Berroth, Manfred, Fink, Thomas, Fritzsche, Daniel, Haupt, Michael, Hofmann, Peter, Köhler, Klaus, Ludwig, Manfred, Mause, Klaus, Raynor, Brian, Rosenzweig, Josef
Jazyk: angličtina
Rok vydání: 1994
Předmět:
Popis: The first 1.3 μm monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on a GaAs substrate has been fabricated. At each differential output the transimpedance is 26.8 kΩ. The bandwidth of 430 MHz implies suitability for transmission rates up to 622 Mbit/s.
Databáze: OpenAIRE