| Autor: |
Alivov, Ya. I., Kalinina, E.V., Cherenkov, A.E., Look, D.C., Ataev, B.M., Omaev, A.K., Chukichev, M.V., Bagnall, D.M. |
| Jazyk: |
angličtina |
| Rok vydání: |
2003 |
| Popis: |
We report on the fabrication of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates. Hydride vapor phase epitaxy was used to grow p-type AlGaN, while chemical vapor deposition was used to produce the n-type ZnO layers. Diode-like, rectifying I-V characteristics, with threshold voltage ~3.2V and low reverse leakage current ~10(-7)A, are observed at room temperature. Intense ultraviolet emission with a peak wavelength near 389 mn is observed when the diode is forward biased; this emission is found to be stable at temperatures up to 500K and shown to originate from recombination within the ZnO. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
