| Autor: |
Heyman, JN, Weiss, EM, Rollag, JR, Yu, KM, Dubon, OD, Kuang, YJ, Tu, CW, Walukiewicz, W |
| Rok vydání: |
2018 |
| Předmět: |
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| Zdroj: |
Semiconductor Science and Technology, vol 33, iss 12 |
| Popis: |
THz Time-Resolved Photoconductivity is used to probe carrier dynamics in the dilute III-V nitride GaP0.49As0.47N0.036. In these measurements a femtosecond optical pump-pulse excites electron-hole pairs, and a delayed THz pulse measures the change in conductivity. We find the photoconductivity is dominated by localized carriers. The decay of photoconductivity after excitation is consistent with bimolecular electron-hole recombination with recombination constant r = 3.2 0.8 10-8 cm3 s-1. We discuss the implications for applications in solar energy. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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