Fatigue failure in thin-film polysilicon is due to subcritical cracking within the oxide layer
| Autor: | Alsem, D.H., Muhlstein, C.L., Stach, E.A., Ritchie, R.O. |
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| Jazyk: | angličtina |
| Rok vydání: | 2005 |
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| Zdroj: | Alsem, D.H.; Muhlstein, C.L.; Stach, E.A.; & Ritchie, R.O.(2005). Fatigue failure in thin-film polysilicon is due to subcritical cracking within the oxide layer. Lawrence Berkeley National Laboratory. Lawrence Berkeley National Laboratory: Lawrence Berkeley National Laboratory. Retrieved from: http://www.escholarship.org/uc/item/1rm835t5 |
| Databáze: | OpenAIRE |
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