Atomic Scale Interface Structure of In{sub 0.2}Ga{sub 0.8}As/GaAs Strained Layers Studied By Cross-Sectional Scanning Tunneling Microscopy

Autor: Zheng, J.F., Salmeron, E.M., Weber, E.R.
Jazyk: angličtina
Rok vydání: 1993
Zdroj: Zheng, J.F.; Salmeron, E.M.; & Weber, E.R.(1993). Atomic Scale Interface Structure of In{sub 0.2}Ga{sub 0.8}As/GaAs Strained Layers Studied By Cross-Sectional Scanning Tunneling Microscopy. Lawrence Berkeley National Laboratory: Lawrence Berkeley National Laboratory. Retrieved from: http://www.escholarship.org/uc/item/5w69g0k0
Databáze: OpenAIRE