| Autor: |
Kumar, S, Wang, Z, Davila, N, Kumari, N, Norris, KJ, Huang, X, Strachan, JP, Vine, D, Kilcoyne, ALD, Nishi, Y, Williams, RS |
| Jazyk: |
angličtina |
| Rok vydání: |
2017 |
| Zdroj: |
Kumar, S; Wang, Z; Davila, N; Kumari, N; Norris, KJ; Huang, X; et al.(2017). Physical origins of current and temperature controlled negative differential resistances in NbO2. Nature Communications, 8(1). doi: 10.1038/s41467-017-00773-4. Lawrence Berkeley National Laboratory: Retrieved from: http://www.escholarship.org/uc/item/6vk89059 |
| Popis: |
© 2017 The Author(s). Negative differential resistance behavior in oxide memristors, especially those using NbO2, is gaining renewed interest because of its potential utility in neuromorphic computing. However, there has been a decade-long controversy over whether the negative differential resistance is caused by a relatively low-temperature non-linear transport mechanism or a high-temperature Mott transition. Resolving this issue will enable consistent and robust predictive modeling of this phenomenon for different applications. Here we examine NbO2memristors that exhibit both a current-controlled and a temperature-controlled negative differential resistance. Through thermal and chemical spectromicroscopy and numerical simulations, we confirm that the former is caused by a ~400 K non-linear-transport-driven instability and the latter is caused by the ~1000 K Mott metal-insulator transition, for which the thermal conductance counter-intuitively decreases in the metallic state relative to the insulating state. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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