The Effect of Gate Leakage on the Noise Figure of AlGaN/GaN HEMTs

Autor:	Sanabria, Christopher
Jazyk:	angličtina
Rok vydání:	2006
Předmět:	AlGaN GaN gate leakage high electron mobility transistor (HEMT) noise figure van der Ziel Hardware_INTEGRATEDCIRCUITS Hardware_PERFORMANCEANDRELIABILITY Hardware_LOGICDESIGN
Zdroj:	Sanabria, Christopher. (2006). The Effect of Gate Leakage on the Noise Figure of AlGaN/GaN HEMTs. Electron Device Letters, IEEE, 27(1), 19-21. doi: 10.1109/LED.2005.860889. UC Santa Barbara: Retrieved from: http://www.escholarship.org/uc/item/9m48w82h
DOI:	10.1109/LED.2005.860889.
Popis:	The effect of gate leakage on the noise figure of AlGaN/GaN high electron mobility transistor (HEMTs) is explored. It is shown that these devices have a sizable amount of gate leakage that cannot be ignored when measuring their noise performance. Measurements across a single sample have more than 1 dB of variation in minimum noise figure. We will show this variation is because of gate leakage. A modified van der Ziel model is used to predict this large variation and allows easy noise figure prediction of HEMT and MESFET devices.
Databáze:	OpenAIRE
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