| Autor: |
Kim, BS, Kyung, WS, Seo, JJ, Kwon, JY, Denlinger, JD, Kim, C, Park, SR |
| Jazyk: |
angličtina |
| Rok vydání: |
2017 |
| Zdroj: |
Kim, BS; Kyung, WS; Seo, JJ; Kwon, JY; Denlinger, JD; Kim, C; et al.(2017). Possible electric field induced indirect to direct band gap transition in MoSe2. Scientific Reports, 7(1). doi: 10.1038/s41598-017-05613-5. Lawrence Berkeley National Laboratory: Retrieved from: http://www.escholarship.org/uc/item/4pb7z68n |
| Popis: |
© 2017 The Author(s). Direct band-gap semiconductors play the central role in optoelectronics. In this regard, monolayer (ML) MX2(M = Mo, W; X = S, Se) has drawn increasing attention due to its novel optoelectronic properties stemming from the direct band-gap and valley degeneracy. Unfortunately, the more practically usable bulk and multilayer MX2have indirect-gaps. It is thus highly desired to turn bulk and multilayer MX2into direct band-gap semiconductors by controlling external parameters. Here, we report angle-resolved photoemission spectroscopy (ARPES) results from Rb dosed MoSe2that suggest possibility for electric field induced indirect to direct band-gap transition in bulk MoSe2. The Rb concentration dependent data show detailed evolution of the band-gap, approaching a direct band-gap state. As ionized Rb layer on the surface provides a strong electric field perpendicular to the surface within a few surface layers of MoSe2, our data suggest that direct band-gap in MoSe2can be achieved if a strong electric field is applied, which is a step towards optoelectronic application of bulk materials. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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