| Autor: |
McLaurin, M, Mates, T E, Wu, F, Speck, J S |
| Jazyk: |
angličtina |
| Rok vydání: |
2006 |
| Zdroj: |
McLaurin, M; Mates, T E; Wu, F; & Speck, J S. (2006). Growth of p-type and n-type m-plane GaN by molecular beam epitaxy. Journal of Applied Physics, 100(6). UC Santa Barbara: Retrieved from: http://www.escholarship.org/uc/item/52d8g7h0 |
| Popis: |
Plasma-assisted molecular beam epitaxial growth of Mg-doped, p-type and Si-doped, n-type m-plane GaN on 6H m-plane SiC is demonstrated. Phase-pure, m-plane GaN films exhibiting a large anisotropy in film mosaic (similar to 0.2 degrees full width at half maximum, x-ray rocking curve scan taken parallel to [112 ($) over bar0] versus similar to 2 degrees parallel to [0001]) were grown on m-plane SiC substrates. Maximum hole concentrations of similar to 7x10(18) cm(-3) were achieved with p-type conductivities as high as similar to 5 Omega(-1) cm(-1) without the presence of Mg-rich inclusions or inversion domains as viewed by cross-section transmission electron microscopy. Temperature dependent Hall effect measurements indicate that the Mg-related acceptor state in m-plane GaN is the same as that exhibited in c-plane GaN. Free electron concentrations as high as similar to 4x10(18) cm(-3) were measured in the Si-doped m-plane GaN with corresponding mobilities of similar to 500 cm(2)/V s measured parallel to the [112 ($) over bar0] direction. (c) 2006 American Institute of Physics. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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