| Autor: |
Brandt, O, Sun, Y J, Schonherr, H P, Ploog, K H, Waltereit, P, Lim, S H, Speck, J S |
| Jazyk: |
angličtina |
| Rok vydání: |
2003 |
| Zdroj: |
Brandt, O; Sun, Y J; Schonherr, H P; Ploog, K H; Waltereit, P; Lim, S H; et al.(2003). Improved synthesis of (In,Ga)N/GaN multiple quantum wells by plasma-assisted molecular-beam epitaxy. Applied Physics Letters, 83(1), 90-92. UC Santa Barbara: Retrieved from: http://www.escholarship.org/uc/item/7wr070fg |
| Popis: |
We present a simple strategy that minimizes the impact of surface segregation of In during the growth of (In,Ga) N/GaN multiple quantum wells by plasma-assisted molecular-beam epitaxy and simultaneously results in abrupt interfaces. The two ingredients of this strategy are (i) the use of a higher substrate temperature than commonly employed, that is, well above the In desorption point and (ii) the use of a modulated stoichiometry, that is, N-rich during growth of the well and Ga-stable during growth of the barrier. (C) 2003 American Institute of Physics. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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