CANCELLED Microstructure development in hot-pressed silicon carbide: ef fects of aluminum, boron, and carbon additives

Autor:	Jonghe, Lutgard C. De
Jazyk:	angličtina
Rok vydání:	2001
Předmět:	SiC Intergranular film Triple-junction TEM EDS
Zdroj:	Jonghe, Lutgard C. De. (2001). CANCELLED Microstructure development in hot-pressed silicon carbide: ef fects of aluminum, boron, and carbon additives. Journal of the American Ceramic Society. Lawrence Berkeley National Laboratory: Lawrence Berkeley National Laboratory. Retrieved from: http://www.escholarship.org/uc/item/37z0k028
Popis:	A detailed structural and chemical characterization was performed on a 110 nm wide intergranular film and the associated triple-junction phases in a polycrystalline SiC prepared by hot pressing with aluminum (A1), boron (B), and carbon (C) sintering additives.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=od_______325::03974ac82a880f438cc4aed393797180 http://www.escholarship.org/uc/item/37z0k028 Zobrazit plný text záznamu