| Autor: |
Manolescu, G, Favaro, L, Knappe, F, Girard, G, Poumellec, B., Renner, H, Bourrée, J, Brinkmeyer, E |
| Přispěvatelé: |
Institut de Chimie Moléculaire et des Matériaux (MAP/SP2M/ICMMO/UPSaclay-CNRS) |
| Jazyk: |
angličtina |
| Rok vydání: |
2020 |
| Předmět: |
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| Popis: |
Using 244 nm CW laser for direct UV writing, we obtained negative index changes in H:Ge:SiO 2 layers deposited by MDECR-PECVD, a method allowing to include a large amount of hydrogen in the structure. The amplitude of the index change is of the order of-10-2 with a UV speed as large as 1 mm/s. The investigation of topography, UV and IR absorption and Raman scattering bring information on the photosensitivity mechanisms. For low laser power ( |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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