Study of Active Filters Topologies for Telecommunications Applications
| Autor: | Andriesei, Cristian |
|---|---|
| Přispěvatelé: | Faculty of Electronics, Telecommunications and Information Technology Iasi (ETTI), 'Gheorghe Asachi' Technical University of Iasi (TUIASI), Equipes Traitement de l'Information et Systèmes (ETIS - UMR 8051), Ecole Nationale Supérieure de l'Electronique et de ses Applications (ENSEA)-Centre National de la Recherche Scientifique (CNRS)-CY Cergy Paris Université (CY), Université de Cergy Pontoise, Farid Temcamani(temcamani@ensea.fr) |
| Jazyk: | angličtina |
| Rok vydání: | 2010 |
| Předmět: |
software defined radio
Inductance active standards wireless CMOS active inductor résonateur reconfigurabilité transistor only simulated inductor wireless standarts front-end accordabilité radio logicielle tunability resonator inductance simulée à transistor seul [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics reconfigurability récepteur |
| Zdroj: | Micro and nanotechnologies/Microelectronics. Université de Cergy Pontoise, 2010. English |
| Popis: | The scope of this thesis is to propose solutions to improve the performances of the CMOS transistor only simulated inductors (TOSI) aiming RF filtering applications. We are interested in TOSI architectures because they prove better performances than the classical gm–C filters, being superior with respect to the number of transistors, power consumption, frequency capability and chip area. Furthermore, TOSI architectures have many potential applications in RF design. In the general context of the multi–standard trend followed by wireless transceivers, TOSI based RF filters may offer the possibility of implementing reconfigurable devices. However, satisfying the telecommunications requirements is not an easy task therefore high order TOSI based filters should be implemented. Consequently, using good second order TOSI cells is a matter of the utmost importance and we propose a novel quality factor tuning principle which offers an almost independent tuning of self resonant frequency and quality factor for simulated inductors. An improved TOSI architecture with increased frequency capability is also reported. |
| Databáze: | OpenAIRE |
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