Low-temperature growth of n(++)-GaN by metalorganic chemical vapor deposition to achieve low-resistivity tunnel junctions on blue light emitting diodes

Autor:	Sohi, Pirouz, Mosca, Mauro, Chen, Yao, Carlin, Jean-Francois, Grandjean, Nicolas
Předmět:	gan tunnel junctions metalorganic chemical vapor deposition hydrogen layers blue light-emitting diodes gan
Popis:	We report on low-resistivity GaN tunnel junctions (TJ) on blue light-emitting diodes (LEDs). Si-doped n(++)-GaN layers are grown by metalorganic chemical vapor deposition directly on LED epiwafers. Low growth temperature (
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=od_______185::fa49680e9350681e0d0155ef87fa659c https://infoscience.epfl.ch/record/263406 Zobrazit plný text záznamu