Integrated Circuit and System Design. Power and Timing Modeling, Optimization and Simulation

Autor:	Parthasarathy, Chittoor, Bravaix, Alain, Guérin, Chloé, Denais, Mickael, Huard, Vincent
Přispěvatelé:	BRAVAIX, Alain
Jazyk:	angličtina
Rok vydání:	2007
Předmět:	Hot-carriers (HC) [SPI] Engineering Sciences [physics] Bias Temperature Instability (BTI) simulator ELDO
Popis:	Practical and accurate Design-in Reliability methodology has been developedfor designs on 90-45nm technology to quantitatively assess the degradationdue to Hot Carrier and Negative Bias Temperature Instability. Simulationcapability has been built on top of an existing analog simulator ELDO. Circuitsare analyzed using this methodology illustrating the capabilities of the methodologyas well highlighting the impacts of the two degradation modes.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=od_______166::afffd335af7898b6619cbbbb30477570 https://hal.science/hal-03660397 Zobrazit plný text záznamu