| Autor: |
Zhang, S, Cui, Y, Griffiths, JT, Fu, WY, Freysoldt, C, Neugebauer, J, Humphreys, CJ, Oliver, RA |
| Přispěvatelé: |
Griffiths, James [0000-0002-1198-1372], Humphreys, Colin [0000-0001-5053-3380], Oliver, Rachel [0000-0003-0029-3993], Apollo - University of Cambridge Repository |
| Jazyk: |
angličtina |
| Rok vydání: |
2015 |
| Předmět: |
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| Popis: |
InₓGa₁₋ₓN structures epitaxially grown on a-plane or m-plane GaN exhibit in-plane optical polarization. Linear elasticity theory treats the two planes equivalently and is hence unable to explain the experimentally observed higher degree of linear polarization for m-plane than a-plane InₓGa₁₋ₓN. Using density functional theory, we study the response of InₓGa₁₋ₓN random alloys to finite biaxial strains on both non-polar planes. The calculated m-plane InₓGa₁₋ₓN valence band splitting is larger than that of a-plane, due to a greater degree of structural relaxation in a-plane InₓGa₁₋ₓN. We provide a parameterization of the valence band splitting of InₓGa₁₋ₓN strained to a-plane and m-plane GaN for In compositions between 0 and 0.5, which agrees with experimental measurements and qualitatively explains the experimentally observed difference between a-plane and m-plane polarization. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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