| Autor: |
Sedghi, N, Li, H, Brunell, IF, Dawson, K, Guo, Y, Potter, RJ, Gibbon, JT, Dhanak, VR, Zhang, WD, Zhang, JF, Hall, S, Robertson, J, Chalker, PR |
| Přispěvatelé: |
Li, Hongfei [0000-0002-8456-5361], Apollo - University of Cambridge Repository |
| Rok vydání: |
2017 |
| Předmět: |
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| Popis: |
© 2017 Author(s). The effect of fluorine doping on the switching stability of Ta2O5 resistive random access memory devices is investigated. It shows that the dopant serves to increase the memory window and improve the stability of the resistive states due to the neutralization of oxygen vacancies. The ability to alter the current in the low resistance state with set current compliance coupled with large memory window makes multilevel cell switching more favorable. The devices have set and reset voltages of |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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