GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates

Autor: Archer, Melissa J., Law, Daniel C., Mesropian, Shoghig, Haddad, Moran, Fetzer, Christopher M., Ackerman, Arthur C., Ladous, Corinne, King, Richard R., Atwater, Harry A.
Jazyk: angličtina
Rok vydání: 2008
Předmět:
Popis: Large area, crack-free GaInP/GaAs double junction solar cells were grown by metal organic chemical vapor deposition on Ge/Si templates fabricated using wafer bonding and ion implantation induced layer transfer. Photovoltaic performance of these devices was comparable to those grown on bulk epi-ready Ge, demonstrating the feasibility of alternative substrates fabricated via wafer bonding and layer transfer for growth of active devices on lattice mismatched substrates.
Databáze: OpenAIRE