| Autor: |
Bai, G., Nicolet, M-A., Mahan, John E., Geib, Kent M., Robinson, Gary Y. |
| Jazyk: |
angličtina |
| Rok vydání: |
1990 |
| Předmět: |
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| Popis: |
Epitaxial ReSi2 thin films grown on Si (100) substrates were analyzed at room temperature by MeV 4He backscattering and channeling spectrometry. The minimum yield of [100] axial channeling increases with increasing exposure of the ReSi2 sample to the analyzing He beam. This means that ReSi2 suffers irradiation damage induced by a MeV 4He beam. The damage in the film induced by a beam incident along a random direction is about one order of magnitude larger than that induced by a beam with an aligned incidence, indicating that the damage is mainly generated by elastic collisions of nuclei. The experimentally measured defect concentration produced at 300 K by a beam of random incidence is compared with the theoretically estimated one produced at 0 K in an amorphous target. The agreement is fairly good, suggesting that the defects are stable at room temperature. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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