11.9 W output power at S-band from 1 mm AiGaN/GaN HEMTS
| Autor: | Krämer, M.C.J.C.M., Karouta, F., Kwaspen, J.J.M., Rudzinski, M., Larsen, P.K., Suiker, E.M., Hek, de, A.P., Rödle, T., Volokhine, I., Kaufmann, L.M.F. |
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| Přispěvatelé: | Photonic Integration |
| Jazyk: | angličtina |
| Rok vydání: | 2008 |
| Zdroj: | Proceedings of the ECS Fall Meeting, Symposium Nitrides and Wide-bandgap Semiconductors (E7), 169-179 STARTPAGE=169;ENDPAGE=179;TITLE=Proceedings of the ECS Fall Meeting, Symposium Nitrides and Wide-bandgap Semiconductors (E7) |
| Popis: | In this paper we present an optimized process for fabrication of dispersion-free small (Wg = 80 µm) and large (Wg = 0.25 mm, 0.5 mm, and 1.0 mm) gate periphery n.i.d. AlGaN/GaN HFETs grown by MOVPE on s.i. 4H-SiC substrates. First small periphery devices were fabricated on three epistructures all having 30nm undoped Al0.3Ga0.7N barrier layer: two using a very thin (1-2 nm) undoped AlN with undoped GaN buffer layer (1.2 µm) and one using a Fedoped semi-insulating (s.i.) GaN layer. |
| Databáze: | OpenAIRE |
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