Fabrication technology of metal-cavity nanolasers in III-V membranes on silicon
| Autor: | Dolores Calzadilla, V.M., Geluk, C.T.T., Vries, de, T., Smalbrugge, B., Veldhoven, van, P.J., Ambrosius, H.P.M.M., Heiss, D., Fiore, A., Smit, M.K. |
|---|---|
| Přispěvatelé: | Photonic Integration, NanoLab@TU/e, Photonics and Semiconductor Nanophysics, Semiconductor Nanophotonics |
| Jazyk: | angličtina |
| Rok vydání: | 2013 |
| Zdroj: | Proceedings of the 18th Annual Symposium of the IEEE Photonics Benelux Chapter, 25-26 November 2013, Eindhoven, The Netherlands, 243-246 STARTPAGE=243;ENDPAGE=246;TITLE=Proceedings of the 18th Annual Symposium of the IEEE Photonics Benelux Chapter, 25-26 November 2013, Eindhoven, The Netherlands |
| Popis: | Electrically pumped metal-cavity nanolasers in III-V semiconductors are promising for their application in optical interconnects, where high integration density and low optical powers are required. They offer a low threshold current and excellent cooling properties due to the metal encapsulation. In this contribution, an overview about the technology required for the fabrication of a nanolaser coupled to an InP-membrane waveguide on silicon is presented. A variety of techniques are used including electron-beam lithography, dry and wet etching, as well as deposition of dielectrics and metals. The technological challenges to fabricate such a complex nanostructure are also discussed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|