Full silicon-nitride probes with corner lithography wireframes for scanning Hall probe microscopy

Autor: Hatakeyama, Kodai, Sarajlic, Edin, Siekman, Martin Herman, Huijink, R., Abelmann, Leon
Rok vydání: 2012
Předmět:
Zdroj: 23rd Micromechanics and Microsystems Europe Workshop, MME 2012
Popis: We present a improvement of our previous design of wireframe tips for scanning Hall probes. By doubling the separation between electrode structures and cantilever base, the yield could be raised from less than 10% to over 75%. To avoid build up of stress gradients, the entire probe is manufactured from silicon-nitride, using a polysilicon sacrificial layer. In this paper cantilever stress measurement and Initial electrical characterization are presented.
Databáze: OpenAIRE