| Autor: |
Karouta, F., Kappers, M.J., Krämer, M.C.J.C.M., Jacobs, B. |
| Přispěvatelé: |
Photonic Integration |
| Jazyk: |
angličtina |
| Rok vydání: |
2005 |
| Zdroj: |
Electrochemical and Solid-State Letters, 8(7), 170-171. Electrochemical Society, Inc. |
| ISSN: |
1099-0062 |
| Popis: |
A technique to enhance the hole concentration in activated Mg-doped p-type GaN epitaxial layers is described. The method consists of depositing a porous plasma-nhancedchemical vapor deposited SiOx layer on top of p-GaN after which the sample is heated to 950°C in nitrogen ambient for 1 min followed by the removal of the SiOx layer in a buffered HF solution. A significant improvement of the conductivity of the p-GaN layer has been obtained. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
