Annealing behavior of crystalline silicon heavily implanted with oxygen at low temperature

Autor:	Bercu, M., Zevenbergen, I.S., Gregorkiewicz, T., Ammerlaan, C.A.J., Tate, T., Ivanov, E., Pajot, B.
Přispěvatelé:	WZI (IoP, FNWI)
Jazyk:	angličtina
Rok vydání:	1997
Zdroj:	Shallow-Level Centers in Semiconductors, 405-410 STARTPAGE=405;ENDPAGE=410;TITLE=Shallow-Level Centers in Semiconductors
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=narcis______::bc5035928ec4672ca425e860699086ae https://dare.uva.nl/personal/pure/en/publications/annealing-behavior-of-crystalline-silicon-heavily-implanted-with-oxygen-at-low-temperature(88fd8411-a5a0-4cfc-9085-8fd83d42a5ac).html Zobrazit plný text záznamu