| Autor: |
Gang, Chen, van der Heijden, R.W., de Waele, A.T.A.M., Gijsman, H.M., van Es, C.M., Tielen, F.P.B., Fast, R.W. |
| Přispěvatelé: |
Applied Physics and Science Education, Photonics and Semiconductor Nanophysics |
| Jazyk: |
angličtina |
| Rok vydání: |
1990 |
| Zdroj: |
1989 Cryogenic Engineering Conference, 2, 1551-1556 |
| Popis: |
Arsenic-doped silicon thermometers using ion implantation techniques are described for low-temperature applications such as bolometry, microcalorimetry, transient heat transfer measurements etc. Ion-implanted thermistors have the advantage of very small heat capacity and fast response. A very fine interdigital structure (5 μm characteristic dimension) was defined in the plane photolithographically. In this way, the geometric factor (= resistance-resistivity ratio) is reduced and the useful range extended. The nominal concentrations of the arsenic were chosen around the concentration of the metal-insulator transition (8.5·1018 atoms cm-3) in the range from 6.4 to 9.7·1018 atoms cm-3. Both metallic and semiconducting behaviour was observed. The electrical resistance measurements between 30 and 1 K show that the thermistors are highly temperature sensitive with |d(logR)/d(logT)|>5 and reproducible after thermal cyclings between room temperature and liquid-helium temperatures. The current-voltage characteristic is strongly nonlinear, which is attributed to an intrinsic electric field effect. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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