Investigation of AI2O3 deposited by ALD as passivation layers for InP-based nano lasers
| Autor: | Khalique, U., Marell, M.J.H., Karouta, F., Keuning, W., Kessels, W.M.M., Hill, M.T., Smit, M.K. |
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| Přispěvatelé: | Photonic Integration, Plasma & Materials Processing, Atomic scale processing |
| Jazyk: | angličtina |
| Rok vydání: | 2008 |
| Zdroj: | Proceedings of the 13th annual symposium of the IEEE/LEOS Benelux Chapter, 27-28 November 2008, Enschede, The Netherlands, 195-198 STARTPAGE=195;ENDPAGE=198;TITLE=Proceedings of the 13th annual symposium of the IEEE/LEOS Benelux Chapter, 27-28 November 2008, Enschede, The Netherlands |
| Popis: | A good passivation layer is primordial for achieving good performances of deeply etched InP-based nano-lasers. In this paper we have investigated the breakdown voltage of Al2O3 deposited by atomic layer deposition (ALD) on InP wafers. A 10-nm thick Al2O3 deposited at 300°C shows a uniform breakdown voltage of 6V. ALD-Al2O3 can easily be etched in HF-based solution, however dry etching is not trivial. We have investigated dry etching Al2O3 in a CHF3 plasma and found an etch rate of 3.5 nm/min which is acceptable for our applications |
| Databáze: | OpenAIRE |
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