Investigating Hot-Carrier Degradation in MOSFETs using Constant and Switched Biased Low-Frequency Noise measurements

Autor:	Kolhatkar, J.S., Hoekstra, E., Hof, A.J., Salm, C., Wallinga, H., Schmitz, J.
Jazyk:	angličtina
Rok vydání:	2004
Předmět:	MOSFETs Hot-carrier degradation Low frequency Noise Deuterium/hydrogen post-metal anneal Switched biasing
Zdroj:	Proceedings SAFE & ProRISC 2004, 700-703 STARTPAGE=700;ENDPAGE=703;TITLE=Proceedings SAFE & ProRISC 2004
Popis:	Periodically switching the MOSFET ‘off’ (switched biasing), is known to reduce the low-frequency (LF) noise power spectrum. In this work, the constant and switched biased LF noise has been measured on devices before and after hot-carrier stress. The switched biased LF noise is more sensitive to hot-carrier degradation than the constant biased LF noise. The anomalous noise reduction, due to switched biasing, observed for fresh devices, gradually disappears as the devices are subjected to hot-carrier stress. Devices with a deuterium passivated SiO2/Si interface degrade significantly slower, as seen from our LF noise measurements.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=narcis______::8574b1d40b149b0c64ce50d0f0db7fed https://research.utwente.nl/en/publications/investigating-hotcarrier-degradation-in-mosfets-using-constant-and-switched-biased-lowfrequency-noise-measurements(9eca4f9d-90c0-4712-b8d0-fc6b840fba87).html Zobrazit plný text záznamu