| Autor: |
Blanquart, T., Niinistö, J., Aslam, N., Banerjee, M., Tomczak, Y., Gavagnin, M., Longo, V., Puukilainen, E., Wanzenboeck, H.D., Kessels, W.M.M., Devi, A., Hoffmann-Eifert, S., Ritala, M., Leskelä, M. |
| Přispěvatelé: |
Plasma & Materials Processing, Atomic scale processing, Processing of low-dimensional nanomaterials |
| Jazyk: |
angličtina |
| Rok vydání: |
2013 |
| Zdroj: |
Chemistry of Materials, 25. American Chemical Society |
| ISSN: |
0897-4756 |
| Popis: |
[Zr(NEtMe)2(guan-NEtMe2)2], a recently developed compound, was investigated as a novel precursor for the atomic layer deposition (ALD) of ZrO2. With water as the oxygen source, the growth rate remained constant over a wide temperature range, whereas with ozone the growth rate increased steadily with deposition temperature. Both ALD processes were successfully developed: the characteristic self-limiting ALD growth mode was confirmed at 300 °C. The growth rates were exceptionally high, 0.9 and 1.15 Å/cycle with water and ozone, respectively. X-ray diffraction (XRD) indicated that the films were deposited in the high-permittivity cubic phase, even when grown at temperatures as low as 250 °C. Compositional analysis performed by means of X-ray photoelectron spectroscopy (XPS) demonstrated low carbon and nitrogen contamination ( |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
