| Autor: |
Sebastiano, Fabio, Breems, Lucien J., Makinwa, Kofi A.A., Drago, S., Leenaerts, Domine M.W., Nauta, Bram |
| Jazyk: |
angličtina |
| Rok vydání: |
2010 |
| Předmět: |
|
| Zdroj: |
IEEE journal of solid-state circuits, 45(12), 2591-2601. IEEE |
| ISSN: |
0018-9200 |
| Popis: |
An NPN-based temperature sensor with digital output transistors has been realized in a 65-nm CMOS process. It achieves a batch-calibrated inaccuracy of ±0.5 ◦C (3¾) and a trimmed inaccuracy of ±0.2 ◦C (3¾) over the temperature range from −70 ◦C to 125 ◦C. This performance is obtained by the use of NPN transistors as sensing elements, the use of dynamic techniques, i.e. correlated double sampling and dynamic element matching, and a single room-temperature trim. The sensor draws 8.3 μA from a 1.2-V supply and occupies an area of 0.1 mm2. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
