Photonic crystals in deeply etched InP-based materials
| Autor: | Heijden, van der, R.W., Geluk, E.J., Karouta, F., Nouwens, P.A.M., Oei, Y.S., Roeling, E.M., Smalbrugge, E., Vries, de, T., Salemink, H.W.M. |
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| Přispěvatelé: | Photonics and Semiconductor Nanophysics, Photonic Integration |
| Jazyk: | angličtina |
| Rok vydání: | 2003 |
| Zdroj: | proc. Semiconductor Advances for Future Electronics (SAFE) 03, 604-609 STARTPAGE=604;ENDPAGE=609;TITLE=proc. Semiconductor Advances for Future Electronics (SAFE) 03 |
| Popis: | A double layer mask strategy involving ebeam lithography, pattern transfer to a SixNy-mask layer with reactive ion etching and deep inductively coupled plasma InP-etching, has been applied to fabricate 2D photonic crystals in InP-substrates. The feasibility of using a 30 kV e-beam tool for photonic crystal fabrication has been demonstrated. Key issue for the RIE-process is the RIE-lag. The first InP-etching tests produced conical shaped holes with a depth around 0.8 µm and a diameter around 250 nm. Significant difference between n-type and semi-insulating InP after ICP etching, in terms of floor roughness, sidewall roughness and sidewall angle of the holes, has been observed. |
| Databáze: | OpenAIRE |
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