Characterization of dielectric charging in RF MEMS
Autor: | Herfst, R.W., Huizing, H.G.A., Steeneken, P.G., Schmitz, Jurriaan |
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Rok vydání: | 2005 |
Předmět: | |
Zdroj: | 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005 (SAFE 2005), 11-14 STARTPAGE=11;ENDPAGE=14;TITLE=8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005 (SAFE 2005) |
Popis: | Capacitive RF MEMS switches show great promise for use in wireless communication devices such as mobile phones, but the successful application of these switches is hindered by the reliability of the devices: charge injection in the dielectric layer (SiN) can cause irreversible stiction of the moving part of the switch. Our research comprises a study on charge injection by stressing the dielectric with electric fields on the order of 1 MV/cm, and by measuring the effects it has on the C-V curve. |
Databáze: | OpenAIRE |
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