| Autor: |
Kodentsov, A., Markovski, S.L., Cserhati, C., Loo, van, F.J.J. |
| Přispěvatelé: |
Materials and Interface Chemistry |
| Jazyk: |
angličtina |
| Rok vydání: |
2001 |
| Zdroj: |
Diffusion and Defect Data. Part A, Defect and Diffusion Forum, 194-199, 1619-1624. Trans Tech Publications |
| ISSN: |
1012-0386 |
| Popis: |
The utility of potential diagrams in predicting the reaction zone morphology developed between a III-V compound semiconductor and a metal is exemplified by the interactions in the GaSb-Co system. A number of experiments were designed to test the model. These are aimed at determining phase equilibria in the Ga-Sb-Co system and studying the microstructural evolution of the reaction zone in bulk as well as thin-film diffusion couples. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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