InP-based photodetector bonded on CMOS with Si3N4 interconnect waveguides
| Autor: | Binetti, P.R.A., Leijtens, X.J.M., Morant Ripoll, A., Vries, de, T., Smalbrugge, E., Oei, Y.S., Di Cioccio, L., Fédéli, J.-M., Lagahe, C., Orobtchouk, R., Thourhout, Van, D., Veldhoven, van, P.J., Nötzel, R., Smit, M.K. |
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| Přispěvatelé: | Photonic Integration, Photonics and Semiconductor Nanophysics |
| Jazyk: | angličtina |
| Rok vydání: | 2009 |
| Předmět: | |
| Zdroj: | Proceedings of the 2009 IEEE LEOS Annual Meeting Conference, (LEOS '09) 4-8 October 2009, Belek-Antalya, TuB2-139/140 STARTPAGE=TuB2;ENDPAGE=139/140;TITLE=Proceedings of the 2009 IEEE LEOS Annual Meeting Conference, (LEOS '09) 4-8 October 2009, Belek-Antalya |
| Popis: | We developed an InP-based photodetector which was bonded on a CMOS wafer containing a Si3N4-wiring photonic circuit. The detector fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing. Integration technology and experimental results are presented in this paper. © 2009 IEEE. |
| Databáze: | OpenAIRE |
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