Investigation of p-contacts in Mg-doped GaN and the effect of various pre-treatments
| Autor: | Karouta, F., Ruscassie, R., Krämer, M.C.J.C.M., Jacobs, B., Moerman, I., Berghmans, F., Thienpont, H., Danckaert, J., Desmet, L. |
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| Přispěvatelé: | Photonic Integration |
| Jazyk: | angličtina |
| Rok vydání: | 2001 |
| Zdroj: | Proceedings of the 6th annual symposium of the IEEE/LEOS Benelux Chapter, 2 December 2001, Brussels, Belgium, 73-77 STARTPAGE=73;ENDPAGE=77;TITLE=Proceedings of the 6th annual symposium of the IEEE/LEOS Benelux Chapter, 2 December 2001, Brussels, Belgium |
| Popis: | P-contacts on MOVPE-grown Mg-doped GaN were investigated as function of various pretreatments in order to enhance the hole concentration of the starting material. After a Mgactivation at 950°C for 30 s in N2-ambient the samples show a typical hole concentration of ~1017 cm-3. In the investigations a metallisation of Ni-Au (20/100 nm) was mostly used which, after a thermal annealing, shows a slight Schottky behaviour. One of the pre-treatments induces a current increase at constant voltage of about 20%. |
| Databáze: | OpenAIRE |
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