1/f noise and switched bias noise measurement in p-MOSFET with varying gate oxide thickness
| Autor: | Kolhatkar, J.S., Salm, Cora, Wallinga, Hans |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2001 |
| Předmět: | |
| Zdroj: | Proceedings of the SAFE Conference, 92-95 STARTPAGE=92;ENDPAGE=95;TITLE=Proceedings of the SAFE Conference |
| Popis: | MOS transistors are notorious for their low frequency noise, which increases with decreasing device size. Using a new noise measurement set up, the power spectral density of 1/f noise in MOSFETs decreases, if the transistors are switched “off��? periodically (switched bias conditions)[1]. In this work, noise measurements on p-MOSFET are reported, with gate oxide thickness varying from 2 to 20 nm, keeping the electric field in the channel constant at 1.4 MV/cm. The switched bias noise and the reduction in the switched bias noise for p-MOSFET, are investigated as a function of the gate oxide thickness and the switching amplitude. Recently reported literature[2] on explanation for switched biased noise reduction is then compared with our measurement results and some explanations are proposed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|