| Autor: |
Planson, Tamiris Grossl Bade, Hassan Hamad, Adrien Lambert, Hervé Morel, Dominique |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
Electronics; Volume 12; Issue 11; Pages: 2529 |
| ISSN: |
2079-9292 |
| DOI: |
10.3390/electronics12112529 |
| Popis: |
The threshold voltage instability in p-GaN gate high electron mobility transistors (HEMTs) has been brought into evidence in recent years. It can lead to reliability issues in switching applications, and it can be followed by other degradation mechanisms. In this paper, a Vth measurement protocol established for SiC MOSFETs is applied to GaN HEMTs: the triple sense protocol, which uses voltage bias to precondition the transistor gate. It has been experimentally verified that the proposed protocol increased the stability of the Vth measurement, even for measurements following degrading voltage bias stress on both drain and gate. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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