| Autor: |
Lu, Yu-Shyan Lin, Chi-Che |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
Micromachines; Volume 14; Issue 6; Pages: 1183 |
| ISSN: |
2072-666X |
| DOI: |
10.3390/mi14061183 |
| Popis: |
This paper reports on improved AlGaN/GaN metal oxide semiconductor high-electron mobility transistors (MOS-HEMTs). TiO2 is used to form the dielectric and passivation layers. The TiO2 film is characterized using X-ray photoemission spectroscopy (XPS), Raman spectroscopy, and transmission electron microscopy (TEM). The quality of the gate oxide is improved by annealing at 300 °C in N2. Experimental results indicate that the annealed MOS structure effectively reduces the gate leakage current. The high performance of the annealed MOS-HEMTs and their stable operation at elevated temperatures up to 450 K is demonstrated. Furthermore, annealing improves their output power characteristics. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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