Reactive ion etching of CVD diamond using MgO electrodes
| Autor: | Misu, Takayuki, Yanai, Jun, Goto, Miki, Arai, Toshihiko |
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| Jazyk: | japonština |
| Rok vydání: | 2007 |
| Předmět: | |
| Zdroj: | 神奈川工科大学研究報告.B,理工学編. 31:43-45 |
| ISSN: | 0916-1902 |
| Popis: | application/pdf Chemical vapor deposition (CVD) diamond etching was investigated in reactive ion etching system using MgO sintered ceramic electrode. MgO electrode system was consisted of two parallel disks with 7cm in diameter. The RF power (13.56MHz) was fixed to be constant as 100W. O2 was supplied to the chamber via mass flow controller. The flow rate, total pressure, and electrode distance were 20sccm, 10Pa, and 2cm, respectively. The polycrystalline diamond films of approximately 14μm thickness on silicon wafers (5x5mm) were used as samples. The diamond etching rate increased about 50 percent when stainless steel electrode was substituted for MgO electrode. The increase of etching rate is probably due to increase of the electron density. |
| Databáze: | OpenAIRE |
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