Advances in Ga2O3 MOSFETs for power switching and beyond

Autor: Higashiwaki, Masataka, Hoi Wong, Man, Kamimura, Takafumi, Nakata, Yoshiaki, Chia-Hung, Lin, Takeyama, Akinori, Makino, Takahiro, Ohshima, Takeshi, Singh, Manikant, Pomeroy, James, Uren, Michael, Casbon, Michael, Tasker, Paul, Goto, Ken, Sasaki, Kohei, Kuramata, Akito, Yamakoshi, Shigenobu, Kuball, Martin, Murakami, Hisashi, Kumagai, Yoshinao
Jazyk: angličtina
Rok vydání: 2018
Popis: Ga2O3 has emerged as a noteworthy ultrawide bandgap semiconductor in the past five years. Owing to excellent material properties based on an extremely large bandgap of over 4.5 eV and the commercial availability of native wafers produced from melt-grown bulk single crystals, Ga2O3-based electronic devices are promising candidates for various applications in power switching, RF, and harsh-environment electronics. First, this presentation will give an overview of our state-of-the-art lateral depletion-mode (D-mode) Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs). The devices demonstrated an off-state breakdown voltage of over 750 V, a drain current on/off ratio of more than nine orders of magnitude, stable device operation at temperatures up to 300°C, and negligibly small DC–RF dispersion. Furthermore, the bulk Ga2O3 channel exhibited strong gamma-ray tolerance by virtue of showing very little on-resistance degradation and threshold voltage shift, thereby demonstrating the strong potential of Ga2O3 devices for radiation-hard electronics. We will also present RF and thermal characteristics of the lateral MOSFETs. In the second part, we will discuss our recent developments of vertical D-mode Ga2O3 MOSFETs. The devices had a current blocking layer formed by Mg- or N-ion implantation and successfully demonstrated drain current modulation by an applied gate bias. However, the devices were still at a primitive development stage and had some severe issues to be resolved.
MRS Fall Meeting & Exhibit
Databáze: OpenAIRE
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