Reflections on the State of Ultra-Wide-Bandgap Ga2O3 MOSFETs

Autor:	Hoi, Wong Man, Nakata, Yoshiaki, Lin, Chia-Hung, Sasaki, Kohei, Morikawa, Yoji, Goto, Ken, Takeyama, Akinori, Makino, Takahiro, Ohshima, Takeshi, Kuramata, Akito, Yamakoshi, Shigenobu, Murakami, Hisashi, Kumagai, Yoshinao, Higashiwaki, Masataka
Jazyk:	angličtina
Rok vydání:	2018
Předmět:	Hardware_GENERAL Hardware_INTEGRATEDCIRCUITS Hardware_PERFORMANCEANDRELIABILITY Hardware_LOGICDESIGN
Popis:	Gallium oxide (Ga2O3) is an emerging ultra-wide-bandgap (4.5–4.9 eV) semiconductor for high power and high voltage electronics with potential applications in harsh environments. Since the first report of a Ga2O3 field-effect transistor (FET) in 2012, Ga2O3 power devices have undergone tremendous technological advancement. This talk reviews the progress we have made and the lessons we have learnt on both lateral and vertical Ga2O3 metal-oxide-semiconductor (MOS) FETs. Future development directions will also be discussed. 20th Workshop on Dielectrics in Microelectronics
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=jairo_______::e0ebb5a19d7979e51586384ff90b0247 https://repo.qst.go.jp/records/73330 Zobrazit plný text záznamu