Alternative techniques to reduce interface traps in n-type 4H-SiC MOS capacitors

Autor: Pensl, Gerhard, Beljakowa, Svetlana, Frank, Thomas, Gao, Kunyuan, Speck, Florian, Seyller, Thomas, Ley, Lothar, Ciobanu, Florin, Afanas'ev, Valery, Stesmans, Andre, Kimoto, Tsunenobu, Schoener, Adolf
Jazyk: angličtina
Rok vydání: 2008
Zdroj: PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS. 245(7):1378-1389
ISSN: 0370-1972
Databáze: OpenAIRE