Alternative techniques to reduce interface traps in n-type 4H-SiC MOS capacitors
Autor: | Pensl, Gerhard, Beljakowa, Svetlana, Frank, Thomas, Gao, Kunyuan, Speck, Florian, Seyller, Thomas, Ley, Lothar, Ciobanu, Florin, Afanas'ev, Valery, Stesmans, Andre, Kimoto, Tsunenobu, Schoener, Adolf |
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Jazyk: | angličtina |
Rok vydání: | 2008 |
Zdroj: | PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS. 245(7):1378-1389 |
ISSN: | 0370-1972 |
Databáze: | OpenAIRE |
Externí odkaz: |