Traveling Liquidus-Zone法による板状のIn(0.3)Ga(0.7)As結晶成長
| Autor: | Kinoshita, Kyoichi, Ogata, Yasuyuki, Adachi, Satoshi, Koshikawa, Naokiyo, Tsuru, Tetsuya, Miyata, Hiroaki, Muramatsu, Yuji, Yoda, Shinichi |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2005 |
| Předmět: |
結晶化
結晶成長 crystallization solution zone レーザダイオード 成長モデル directional solidification indium gallium arsenide plate crystal arsenic compound インジウムガリウム砒素 traveling liquidus-zone method 砒素化合物 1方向凝固 板状結晶 対流 convection laser diode 液相線 crystal growth gravity condition 飽和溶融帯移動法 liquidus growth model 溶液ゾーン 重力条件 |
| Zdroj: | 宇宙航空研究開発機構研究開発報告 = JAXA Research and Development Report: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous Crystals. :14-20 |
| ISSN: | 1349-1113 |
| Popis: | The TLZ method is a new crystal growth method which has been invented for the growth of homogeneous mixed crystals. The influence of convection in a melt on the compositional homogeneity of TLZ-grown In(x)Ga(1-x)As crystals was investigated by the growth of various diameter crystals on the ground. The results have shown that excellent compositional homogeneity is realized even on the ground if the crystal diameter is less than 2 mm and convection in a melt is suppressed. However, such small diameter crystals cannot be used for device application. Then, the plate crystal growth for obtaining large surface area was tried since the limitation of the thickness of plate crystal was useful for suppressing convection in a melt. In(0.3)Ga(0.7)As plate crystals with 10 mm width and 2 mm thickness showed good compositional homogeneity as expected but the grown crystals were poly crystals. Single crystallization of plate crystals is required for device fabrication and the effort was made to grow plate-like In(0.3)Ga(0.7)As single crystals. Those results obtained in this study in the fiscal year of 2003 is reported here. 資料番号: AA0048451002 レポート番号: JAXA-RR-04-022E |
| Databáze: | OpenAIRE |
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