| Autor: |
Matsubara, Ichiro, Sasahara, Shingo, Mishina, Tomobumi, Ishibashi, Yasuhiko, Kobayashi, Toshihiko, Nakahara, Jun'ichiro |
| Jazyk: |
angličtina |
| Rok vydání: |
2006 |
| Předmět: |
|
| Zdroj: |
physica status solidi (b). 243(8):1893-1897 |
| ISSN: |
0370-1972 |
| Popis: |
Photoluminescence in implanted and doped silicon at room temperature is measured, and the observed structures are assigned as intrinsic phonon-assisted indirect allowed transitions. The temperature of photoexcited carriers, which is higher than the bath temperature, is estimated. For confined carriers produced by boron implantation the temperature dependence of the effective temperature of the excited carriers is the same for the different samples, but an enhancement of the photoluminescence is observed. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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