[ 183] D. Kitayama, T. Kubota, T. Koyonagi, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai, 'Silicate Reaction Control at Lanthanum Oxide and Silicon Interface for Equivalent Oxide Thickness of 0.5nm* Adjustment of Amount of Residual Oxygen Atoms in Metal Layer', Japanese Journal of Applied Physics, Vol.50, No.10, pp.10PA05-1-5, October, 2011

Autor:	Koyanagi, Tomotsune, KAKUSHIMA, Kuniyuki, Parhat, Ahmet, TSUTSUI, KAZUO, Sugii, Nobuyuki, NATORI, KENJI, hattori, takeo, IWAI, HIROSHI
Jazyk:	angličtina
Rok vydání:	2011
Zdroj:	Japanese Journal of Applied Physics. 50(No. 10)
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=jairo_______::91991124eb087fe5dc54bf2c160978e1 http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100647422 Zobrazit plný text záznamu