Growth of In(0.1)Ga(0.9)As single crystal plates and fabrication of In(x)Ga(1-x)As/In(0.1)Ga(0.9)As-Starained Quantum Wells (SQW)

Autor:	Tsuru, Tetsuya, Miyata, Hiroaki, Muramatsu, Yuji, Ogata, Yasuyuki, Kinoshita, Kyoichi, Adachi, Satoshi, Yoda, Shinichi, Arai, Masakazu, Watanabe, Takao, Kondo, Yasuhiro
Jazyk:	angličtina
Rok vydání:	2006
Předmět:	光通信 optical fiber InGaAs 結晶成長 crystal growth 光ファイバ vapor phase epitaxy 飽和溶融帯移動法 気相エピタキシー 単結晶 photoluminescence single crystal traveling liquidus zone method フォトルミネッセンス optical communication
Zdroj:	宇宙航空研究開発機構特別資料 = JAXA Special Publication: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous Crystals. :1-6
ISSN:	1349-113X
Popis:	We grew compositionally homogeneous platy single crystals of In(0.1)Ga(0.9)As composition by the Traveling Liquidus Zone (TLZ) method. We also fabricated In(x)Ga(1-x)As-SQWs on the In(0.1)Ga(0.9)As substrate by the Metal Organic Vapor Epitaxy (MOVPE) method. In the photoluminescence (PL) measurement, we observed emission at 1.3 micrometer from the In(0.5)Ga(0.5)As/In(0.1)Ga(0.9)As-SQW. 資料番号: AA0049798001 レポート番号: JAXA-SP-05-036E
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=jairo_______::8fb4aa58c59b35d3d8cf880a2d42359e http://id.nii.ac.jp/1696/00006083/ Zobrazit plný text záznamu