Study of laser excitation and damage in silicon using Three-Temperature model
| Autor: | Venkat, Prachi, Tomohito, Otobe |
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| Jazyk: | angličtina |
| Rok vydání: | 2022 |
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| Popis: | Numerical study of laser excitation in silicon helps in understanding the physical processes during excitation and the consequent onset of damage in the target. We present Three-Temperature model which considers the electron, hole and lattice temperatures separately. The effect of changing field and band re-normalization is also considered. The damage threshold and possible damage mechanisms are studied for silicon and the calculated threshold is compared with the experimental data. We also study the effect of change in laser wavelength on the dynamics and damage threshold. OPTO2022 Symposium |
| Databáze: | OpenAIRE |
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